| PART |
Description |
Maker |
| NDP6020P NDB6020P |
P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管（漏电流-24A, 漏源电压-20V，导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
|
| IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管（N沟道增强型硅门）)
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| RFK35N10 RFK35N08 |
POWER MOS FIELD - EFFECT TRANSISTORS, N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
| SSM3J13T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| SSM3J14T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch DC-DC Converters
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| FDS9934C FDS9934CNL |
Dual N- and P-Channel enhancement mode power field effect transistors 6.5 A, 20 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
20V Complementary PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
|
| H01N45A |
N-channel High Voltage MOSFET
N-Channel Power Field Effect Transistor
|
Hi-Sincerity Mocroelectronics Corp.
HSMC[Hi-Sincerity Mocroelectronics]
|
| H07N60 H07N60F H07N60E |
N-Channel Power Field Effect Transistor
|
HSMC[Hi-Sincerity Mocroelectronics]
|
| H07N65 |
N-Channel Power Field Effect Transistor
|
Hi-Sincerity Mocroelectronics
|
| NDB7051 |
N-Channel Enhancement Mode Field Effect Transistor 70 A, 50 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Fairchild Semiconductor, Corp.
|
| NDB710A NDB710BE NDB710AE NDB710B NDP710BE NDB410A |
N-Channel Enhancement Mode Field Effect Transistor 40 A, 100 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
